SUB-0.25-MU-M ION PROJECTION LITHOGRAPHY (IPL) IN PMMA-BASED AND NOVOLAK-BASED RESIST MATERIALS (RAY-PF, RAY-PN, SAL-603)

被引:6
作者
CEKAN, E
FALLMANN, W
FRIZA, W
PASCHKE, F
STANGL, G
HUDEK, P
BAYER, E
KRAUS, H
机构
[1] Society for Microelectronics, A-1040 Vienna
[2] Inst. of Computer Systems, Slov. Academy of Science
关键词
D O I
10.1016/0167-9317(92)90048-V
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:241 / 244
页数:4
相关论文
共 5 条
[1]  
Loschner, Et al., ISIAT 91, (1991)
[2]  
Loschner, Et al., ME 91, (1991)
[3]  
Stangl, Et al., TU-Seminar Groβarl 91, (1991)
[4]  
Hudek, Et al., EBT 88, (1988)
[5]  
Stangl, Et al., ME 88, (1988)