HALL-EFFECT AND MAGNETORESISTANCE IN UNISN

被引：16

作者：

DIEHL, J

FISCHER, H

KOHLER, R

GEIBEL, C

STEGLICH, F

MAEDA, Y

TAKABATAKE, T

FUJII, H

机构：

[1] TH DARMSTADT, INST FESTKORPERPHYS, HSCH STR 8, W-6100 DARMSTADT, GERMANY

[2] HIROSHIMA UNIV, FAC INTEGRATED ARTS & SCI, HIROSHIMA 730, JAPAN

来源：

PHYSICA B-CONDENSED MATTER | 1993年 / 186-88卷

关键词：

Antiferromagnetic materials - Crystal structure - Electron transport properties - Energy gap - Hall effect - Magnetic properties - Magnetic semiconductors - Nickel compounds - Paramagnetism - Phase transitions - Tin compounds;

D O I：

10.1016/0921-4526(93)90680-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have reinvestigated the Hall effect and the magnetoresistance of UNiSn in a high-quality sample. Analysis of the results indicate the presence of at least three different types of carriers in the semiconducting state and a complex behavior at the transition from paramagnetic semiconductor to antiferromagnetic metal. Contrary to the expected result we observed only small changes in the carrier concentration but a large increase in the mobility.

引用

页码：708 / 710

页数：3

共 6 条

[1] GAP AT FERMI LEVEL IN SOME NEW D-ELECTRON AND F-ELECTRON INTERMETALLIC COMPOUNDS [J].