EFFECTS OF DISTRIBUTED NATURE OF BASE RESISTANCE ON MANIFESTATION OF NOISE IN PLANAR TRANSISTORS

被引：9

作者：

KNOTT, KF ^{[1
]}

SUTCLIFF.H ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,ENGLAND

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1973年 / 120卷 / 06期

关键词：

D O I：

10.1049/piee.1973.0137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：623 / 628

页数：6

共 9 条

[1] BAELDE H, 1961, PHILIPS RES REP, V16, P225
[2] CARSLOW JS, 1959, CONDUCTION HEAT SOLI, pCH5
[3] FAULKNER EA, 1966, ELECTRON LETT, V2, P426
[4] GAERTNER WW, 1953, BELL SYST TECH J, V32, P1271
[5] HIGGINS TJ, 1944, T ASME, V66, P665
[6] PRECISE WIDEBAND GAUSSIAN NOISE SOURCES USING JN FET AMPLIFIERS AND RESISTOR NOISE
KNOTT, KF
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (03): : 254 - &
[7] DIRECT MEASUREMENT OF NOISE APPEARING IN BASE CIRCUIT OF A BIPOLAR TRANSISTOR
KNOTT, KF
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1968, 115 (07): : 903 - &
[8] EFFECT OF TEMPERATURE ON BASE RESISTANCE AND NOISE FACTOR OF A BIPOLAR JUNCTION TRANSISTOR
SHAH, NK
[J]. ELECTRONICS LETTERS, 1972, 8 (15) : 390 - &
[9] THORNTON RD, 1966, CHARACTERISTICS LIMI