PRESSURE-DEPENDENCE OF THE BAND-GAPS AND CHARGE-DENSITIES IN SI

The empirical local and nonlocal pseudopotentials of Si which can describe the electronic energy structure over a wide energy range of more than 20 eV from the bottom of the valence band is determined for different pressures. The nonlocality of the potential is described by the Gaussian model. The predictions for the linear and quadratic pressure coefficients are consistent with the experiment. The valence charge densities of Si under high pressure are studied. The forbidden X-ray factor F(222) is very stable under pressure and changes by less than 3% under volume changes of the order of 5%.