GROWTH AND CRYSTAL STRUCTURES IN HETEROEPITAXIAL CDS DEPOSITED ON GAP

[1] LEVICH VG, 1956, PHYSICOCHEMICAL HYDR

[2] MARGUART JR, 1963, J CHEM PHYS, V39, P283

[3] MISHENKO KP, 1965, HDB PHYSIOCHEMICAL

[4] POGORELIY AD, 1948, SOVIET J PHYS CHEM, V22, P731

[5] RUMYANTSEV YM, 1969, IZV SIBIRSK AKAD NAU, V9, P49

[6] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 988 - &

[1] LEVICH VG, 1956, PHYSICOCHEMICAL HYDR

[2] MARGUART JR, 1963, J CHEM PHYS, V39, P283

[3] MISHENKO KP, 1965, HDB PHYSIOCHEMICAL

[4] POGORELIY AD, 1948, SOVIET J PHYS CHEM, V22, P731

[5] RUMYANTSEV YM, 1969, IZV SIBIRSK AKAD NAU, V9, P49

[6] VAPOR PHASE DEPOSITION AND ETCHING OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 988 - &