TRANSPORT-PROPERTIES OF A 2D-ELECTRON SOLID IN SI-MOSFETS

被引：5

作者：

DIORIO, M

CAMPBELL, JW

PUDALOV, VM

SEMENCHINSKY, SG

机构：

[1] TROITSK HIGH PRESSURE PHYS INST,TROITSK 142092,USSR

[2] MOSCOW METROL SERV INST,MOSCOW 117334,USSR

[3] UNIV OTTAWA,OTTAWA K1N 6N5,ONTARIO,CANADA

来源：

SURFACE SCIENCE | 1992年 / 263卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)90305-P

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recently we reported the observation of magnetic field induced transitions between insulator and integer quantum Hall effect states in very high mobility Si-MOSFETs at temperatures below 0.5 K and dilute electron concentrations n(s) below 10(11) cm-2. We present results of activation energy, current-voltage characteristics and threshold field measurements which are attributed to sliding transport in a pinned electron solid (ES) forming near half filled Landau levels at low magnetic fields in Si-MOSFETs.

引用

页码：49 / 54

页数：6

共 14 条

[1] OBSERVATION OF A MAGNETICALLY INDUCED WIGNER SOLID [J].