IMPURITY ATOM TRANSFER DURING EPITAXIAL DEPOSITION OF SILICON

被引：18

作者：

SKELLY, G ^{[1
]}

ADAMS, AC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 01期

关键词：

D O I：

10.1149/1.2403380

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：116 / 122

页数：7

共 25 条

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[9] SILICON EPITAXIAL LAYERS WITH ABRUPT INTERFACE IMPURITY PROFILES [J].

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