THERMAL-DECOMPOSITION OF DIETHYLGERMANE ON SI(100)-(2X1)

被引：44

作者：

DU, W ^{[1
]}

KEELING, LA ^{[1
]}

MICHAELGREENLIEF, C ^{[1
]}

机构：

[1] UNIV MISSOURI,DEPT CHEM,COLUMBIA,MO 65211

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.579130

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The adsorption and decomposition of diethylgermane, GeH2(C2H5)2 (or GeH2Et2), on the Si(100)-(2 x 1) surface is investigated with the intent of elucidating the surface processes leading to the deposition of epitaxial Ge thin films from gaseous Ge-containing sources. Low GeH2Et2 exposures to Si(100) at 110 K result in dissociative adsorption of the molecule with both ethyl groups transferring to the silicon surface. Heating of the sample to higher temperatures results in the decomposition of the adsorbed ethyl groups. GeH2 is the other adsorption product which also decomposes at higher temperatures to atomic Ge. The final reaction products are H-2, C2H4, and atomic Ge. The ethylene produced is consistent with a beta-hydride elimination reaction.

引用

页码：2281 / 2286

页数：6

共 33 条

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