OPTOELECTRONIC CHARACTERIZATION BY PHOTOTHERMAL DEFLECTION - SILICON SOLAR-CELLS

被引：6

作者：

GRUNOW, P ^{[1
]}

SCHIECK, R ^{[1
]}

机构：

[1] HAHN MEITNER INST BERLIN GMBH, DEPT CS, D-14109 BERLIN, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.358747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photothermal deflection is used to investigate the electronic transport in a pn silicon solar cell. The dependence of the deflection signal on an external bias voltage in the closed circuit and on additional bias illumination in the open-circuit case is simulated successfully with a semimicroscopic approach using the expressions for the current voltage characteristics obtained from the diode theory. The experimental results on various crystalline silicon solar cells demonstrate the ability of the method for contactless all-optical characterization of photovoltaic interfaces. © 1995 American Institute of Physics.

引用

页码：2773 / 2781

页数：9

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