CRITICAL-POINT FOR ELECTRON-HOLE DROPLET CONDENSATION IN SEMICONDUCTORS

New evaluations of the critical temperatures and densities for electron-hole droplet condensation in Ge and Si with varying uniaxial strain are presented based on a plasmalike description of the system near the critical point. From these and previous calculations, it is pointed out that within this model the evaluation of the critical temperature does not depend sensitively on details of the correlation energy. The critical temperatures are in reasonable agreement with, but slightly higher than, the most recent experimental results for Ge and Si; such results are expected from this approach which neglects statistical fluctuations. © 1979 The American Physical Society.