GIANT MAGNETORESISTANCE - A PRIMER

被引:79
作者
WHITE, RL
机构
[1] Department of Materials Science and Engineering Stanford University, Stanford, CA
关键词
D O I
10.1109/20.179533
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The giant magnetoresistive effect appears in a number of ultra-thin multilayer systems in which thin magnetic films, a few tens of angstrom thick, are separated by non-magnetic metal films, also on the order of tens of angstrom thick. For the effect to appear, the primary requirement is that the relative orientation of successive magnetic layers must be susceptible to change by the application of a magnetic field. The basic physical origin of the effect is the differential scattering of electrons parallel to and antiparallel to the local magnetization. This differential scattering arises either from the character of the scattering centers or in the different density of states functions for the two spin species. The giant magnetoresistive effect is of great interest because of its potential utility in magnetoresistive "read" heads in the information storage industry.
引用
收藏
页码:2482 / 2487
页数:6
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