Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multichip modules. These thin-film decoupling capacitors are intended to replace multilayer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved highspeed performance, due to a decrease in interconnect inductance, PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants (epsilon greater than or equal to 900), low dielectric losses (tan delta approximate to 0.01), excellent insulation resistances (p > 10(13) Omega-cm at 125 degrees C), and good breakdown field strengths (E(B) approximate to 900 kV/cm), For integrated circuit applications, the PLZT dielectric is Less than 1 mu m thick, which results in a large capacitance/area (8-9 nF/mm(2)), The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.