SI-]SIO2 TRANSFORMATION - INTERFACIAL STRUCTURE AND MECHANISM

被引：306

作者：

OURMAZD, A ^{[1
]}

TAYLOR, DW ^{[1
]}

RENTSCHLER, JA ^{[1
]}

BEVK, J ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1103/PhysRevLett.59.213

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：213 / 216

页数：4

共 10 条

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[7] OBSERVATION OF (5X5) SURFACE RECONSTRUCTION ON PURE SILICON AND ITS STABILITY AGAINST NATIVE-OXIDE FORMATION
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