DOUBLE AND TRIPLE CHARGE PUMP FOR POWER IC - DYNAMIC-MODELS WHICH TAKE PARASITIC EFFECTS INTO ACCOUNT

被引：48

作者：

DICATALDO, G

PALUMBO, G

机构：

[1] Dipartimento Elettrico, Elettronico e Sistemistico, Universitá di Catania

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 1993年 / 40卷 / 02期

关键词：

15;

D O I：

10.1109/81.219823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we propose an optimized design methodology for the double and triple charge pump. The circuits discussed give an output voltage greater than the supply voltage and are commonly used in power IC or memory to allow the switching on of a MOS device. Theoretical models of charge pumps in the transient region are given. The models take parasitic capacitances and current leakage into account. They allow us to obtain better knowledge of the circuit dynamics and to achieve an optimized design.

引用

页码：92 / 101

页数：10

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