PHOTO-LUMINESCENCE IN LASER-ANNEALED NEUTRON TRANSMUTED SILICON - ISOELECTRONIC TRAPS

被引：21

作者：

ROSTWOROWSKI, JA

PARSONS, RR

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1981年 / 59卷 / 04期

关键词：

Compendex;

D O I：

10.1139/p81-062

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：496 / 499

页数：4

共 25 条

[1]

AUSTON DH, 1979, BELL LAB REC, V57, P186

[2]

Billington D.S., 1961, RAD DAMAGE SOLIDS

[3]

CZAJA W, 1971, FESTKORPERPROBLEME, V11, P65

[4]

Dean P. J., 1973, Progress in solid state chemistry. Vol.8, P1

[5] ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 185 (03) :1064-&

[6] ISOELECTRONIC TRAP LI-LI-O IN GAP [J].

DEAN, PJ .

PHYSICAL REVIEW B, 1971, 4 (08) :2596-&

[7]

Dvurechensky A. V., 1979, LASER SOLID INTERACT, P245

[8]

HERZER H, 1977, SEMICONDUCTOR SILICO, P106

[9] HIGH-RESOLUTION STUDY OF THE EXCITATION SPECTRUM OF PHOSPHORUS DONORS INTRODUCED IN SILICON BY NEUTRON TRANSMUTATION [J].

JAGANNATH, C ;

GRABOWSKI, ZW ;

RAMDAS, AK .

SOLID STATE COMMUNICATIONS, 1979, 29 (04) :355-359

[10] APPLICATION OF THERMAL-NEUTRON IRRADIATION FOR LARGE-SCALE PRODUCTION OF HOMOGENEOUS PHOSPHORUS DOPING OF FLOATZONE SILICON [J].

JANUS, HM ;

MALMROS, O .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :797-802

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