TRANSIENT ELECTROLUMINESCENCE OF MONOLAYER AND BILAYER SEXITHIOPHENE DIODES

被引：33

作者：

DELANNOY, P

HOROWITZ, G

BOUCHRIHA, H

DELOFFRE, F

FAVE, JL

GARNIER, F

HAJLAOUI, R

HEYMAN, M

KOUKI, F

MONGE, JL

VALAT, P

WINTGENS, V

YASSAR, A

机构：

[1] UNIV PARIS 07,CNRS,URA 17,F-75251 PARIS 05,FRANCE

[2] CNRS,MAT MOLEC LAB,F-94320 THIAIS,FRANCE

[3] SCHNEIDER ELECT,DIRECT RECH & DEV,F-92000 NANTERRE,FRANCE

[4] FAC SCI TUNIS,PHYS MAT CONDENSEE LAB,TUNIS 1060,TUNISIA

来源：

SYNTHETIC METALS | 1994年 / 67卷 / 1-3期

关键词：

ELECTROLUMINESCENCE; DIODES; SEXITHIOPHENE;

D O I：

10.1016/0379-6779(94)90040-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The transient electroluminescence of monolayer and bilayer sexithiophene-based diodes has been measured. The delay time of the luminescence onset of the monolayer diode corresponds to a hole mobility of 5 x 10(-6) cm(2) V-1 s(-1) which is considerably lower than that obtained by field-effect measurements. This is interpreted in terms of strong transient trapping. The bilayer diode presents a twofold time-resolved response which is attributed to the different mobility of its constituent layers.

引用

页码：197 / 200

页数：4

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