AMPLIFIED SPONTANEOUS EMISSION AND GAIN CHARACTERISTICS OF FABRY-PEROT AND TRAVELING WAVE TYPE SEMICONDUCTOR-LASER AMPLIFIERS

被引：25

作者：

THYLEN, L

机构：

[1] Univ of California, Berkeley, CA,, USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 08期

关键词：

D O I：

10.1109/3.7080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

13

引用

收藏

页码：1532 / 1537

页数：6

相关论文

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