POSITRON LIFETIME EXPERIMENTS IN INDIUM SELENIDE

被引:11
作者
DELACRUZ, RM
PAREJA, R
SEGURA, A
CHEVY, A
机构
[1] UNIV VALENCIA,FAC FIS,DEPT FIS APLICADA,VALENCIA,SPAIN
[2] PHYS MILIEUX CONDENSES LAB,F-75230 PARIS 05,FRANCE
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1988年 / 21卷 / 24期
关键词
D O I
10.1088/0022-3719/21/24/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:4403 / 4408
页数:6
相关论文
共 20 条
[1]   POSITRON-ANNIHILATION STUDIES OF STAGE-1 DONOR GRAPHITE-INTERCALATION COMPOUNDS [J].
CARTIER, E ;
HEINRICH, F ;
GUBLER, UM ;
PFLUGER, P ;
GEISER, V ;
GUNTHERODT, HJ .
SYNTHETIC METALS, 1983, 8 (1-2) :119-124
[2]   POSITRON LIFETIMES IN GAAS [J].
CHENG, LJ ;
KARINS, JP ;
CORBETT, JW ;
KIMERLING, LC .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2962-2964
[3]   LARGE INSE MONOCRYSTALS GROWN FROM A NONSTOICHIOMETRIC MELT [J].
CHEVY, A ;
KUHN, A ;
MARTIN, MS .
JOURNAL OF CRYSTAL GROWTH, 1977, 38 (01) :118-122
[4]  
CHEVY A, 1984, J APPL PHYS, V56, P979
[5]   INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J].
DANNEFAER, S ;
HOGG, B ;
KERR, D .
PHYSICAL REVIEW B, 1984, 30 (06) :3355-3366
[6]   INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].
DANNEFAER, S ;
DEAN, GW ;
KERR, DP ;
HOGG, BG .
PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714
[7]   A SYSTEMATIC STUDY OF POSITRON LIFETIMES IN SEMICONDUCTORS [J].
DANNEFAER, S .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03) :599-605
[8]   POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS [J].
DLUBEK, G ;
BRUMMER, O ;
PLAZAOLA, F ;
HAUTOJARVI, P .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (03) :331-344
[9]   TWO-DIMENSIONAL DEFECTS IN INSE [J].
HOUDY, P ;
MAURICE, JL ;
BESSON, JM ;
LAVAL, JY ;
CHEVY, A ;
GOROCHOV, O .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) :5267-5271
[10]   PHOTO-LUMINESCENCE OF ZN DOPED INSE SINGLE-CRYSTALS [J].
IKARI, T ;
SHIGETOMI, S ;
KOGA, Y ;
SHIGETOMI, S .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (01) :K81-K83