DIFFUSION OF OXYGEN VACANCIES IN REDUCED RUTILE (TIO2)

被引：62

作者：

IGUCHI, E

YAJIMA, K

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.32.1415

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1415 / &

共 28 条

[1]

AONO M, PRIVATE COMMUNICATIO

[2] MULTIPLE-BAND CONDUCTION IN N-TYPE RUTILE (TIO2) [J].

BECKER, JH ;

HOSLER, WR .

PHYSICAL REVIEW, 1965, 137 (6A) :1872-&

[3]

BECKER JH, 1962, P INT C CRYST LATT D

[4]

BECKER JH, 1963, J PHYS SOC JAPAN S2, V18, P152

[5]

BLUMENTHAL RN, 1965, J PHYS CHEM SOLIDS, V27, P643

[6] ELECTRICAL PROPERTIES OF TITANIUM DIOXIDE SEMICONDUCTORS [J].

BRECKENRIDGE, RG ;

HOSLER, WR .

PHYSICAL REVIEW, 1953, 91 (04) :793-802

[7] POINT-DEFECT RELAXATION IN RUTILE SINGLE CRYSTALS [J].

CARNAHAN, RD ;

BRITTAIN, JO .

[8] ELECTRON SPIN RESONANCE IN SEMICONDUCTING RUTILE [J].

CHESTER, PF .

[9]

CRANK J, 1956, MATH DIFFUSION, P45

[10] PROPERTIES OF RUTILE (TITANIUM DIOXIDE) [J].

GRANT, FA .