RELAXATION OF PHOSPHOR FIELD IN SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES

被引:12
作者
OHMI, K
INOUE, S
TANAKA, S
KOBAYASHI, H
机构
[1] Department of Electrical and Electronic Engineering, Tottori University, Koyama
关键词
D O I
10.1063/1.111242
中图分类号
O59 [应用物理学];
学科分类号
摘要
Capacitance-applied voltage and internal charge-phosphor field characteristics of SrS:Ce thin film electroluminescent devices have been studied. The average phosphor field of the SrS:Ce films reaches the maximum of 1.3 MV/cm and relaxes to 0.7 MV/cm, although the applied voltage increases. The turn-on voltage of the SrS:Ce thin film electroluminescent device decreases nonlinearly with increase of conduction charge and depends on the slew rate dV/dt. A large spike current is observed and is thought to correspond to the charge generation in the SrS:Ce layer, which results in the space charge, and causes a relaxation of phosphor field in the SrS:Ce films.
引用
收藏
页码:3464 / 3466
页数:3
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