COMPUTER-SIMULATION MODEL OF THE EFFECTS OF INTERFACE STATES ON HIGH-PERFORMANCE AMORPHOUS-SILICON SOLAR-CELLS

被引：78

作者：

TASAKI, H

KIM, WY

HALLERDT, M

KONAGAI, M

TAKAHASHI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：550 / 559

页数：10

共 17 条

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[4] PHYSICS OF AMORPHOUS-SILICON ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :997-1020

[5] USE OF A CARBON-ALLOYED GRADED-BAND-GAP LAYER AT THE P/I-INTERFACE TO IMPROVE THE PHOTOCHARACTERISTICS OF AMORPHOUS-SILICON ALLOYED P-I-N SOLAR-CELLS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J].

KIM, WY ;

TASAKI, H ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :3071-3076

[6]

KIM WY, 1985, 17TH C SOL STAT DEV, P4

[7]

KONAGAI M, 1986, 2ND P INT PVSEC BEIJ, P437

[8]

NAKANO S, 1984, 1ST INT PHOT SCI ENG, P583

[9]

Sakai H., 1985, Sixth E.C. Photovoltaic Solar Energy Conference, P682

[10]

SAKAI H, 1984, 1ST INT PHOT SCI ENG, P591

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