PHOTOCONDUCTIVITY LIFETIME MEASUREMENTS ON HGCDTE USING A CONTACTLESS MICROWAVE TECHNIQUE

被引:34
作者
CHEN, MC
机构
关键词
D O I
10.1063/1.341901
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:945 / 947
页数:3
相关论文
共 16 条
[1]   CONTACTLESS SCANNER FOR PHOTOACTIVE MATERIALS USING LASER-INDUCED MICROWAVE-ABSORPTION [J].
BECK, G ;
KUNST, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (02) :197-201
[2]   NONDESTRUCTIVE LIFETIME MEASUREMENT IN SILICON-WAFERS BY MICROWAVE REFLECTION [J].
BORREGO, JM ;
GUTMANN, RJ ;
JENSEN, N .
SOLID-STATE ELECTRONICS, 1987, 30 (02) :195-203
[3]  
COLLIER SS, 1976, PHOTOGR SCI ENG, V20, P54
[4]   CHARACTERIZATION OF GAAS AND SI BY A MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J].
CUMMINGS, KD ;
PEARTON, SJ ;
VELLACOLEIRO, GP .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1676-1680
[5]   MEASUREMENT OF LIFETIME OF CARRIERS IN SEMICONDUCTORS THROUGH MICROWAVE REFLECTION [J].
DEB, S ;
NAG, BR .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) :1604-&
[6]   MICROWAVE PHOTOCONDUCTIVITY LIFETIME MEASUREMENTS - EXPERIMENTAL LIMITATIONS [J].
DERI, RJ ;
SPOONHOWER, JP .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1984, 55 (08) :1343-1347
[7]   NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRICAL UNIFORMITY IN SEMI-INSULATING GAAS SUBSTRATES BY MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J].
HASEGAWA, H ;
OHNO, H ;
SHIMIZU, H ;
SEKI, S .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) :931-948
[8]  
JACOB H, 1963, P IEEE, V51, P58
[9]   MICROWAVE PHOTOCONDUCTIVITY AND LUMINESCENCE OF ZNS AND CDS PHOSPHORS [J].
KRAMER, B ;
KALIKSTEIN, K ;
GELFMAN, S .
PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (02) :556-+
[10]   THE STUDY OF CHARGE CARRIER KINETICS IN SEMICONDUCTORS BY MICROWAVE CONDUCTIVITY MEASUREMENTS [J].
KUNST, M ;
BECK, G .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3558-3566