BAND STRUCTURE, PHYSICAL PROPERTIES, AND STABILITY OF TIO BY AUGMENTED-PLANE-WAVE VIRTUAL-CRYSTAL APPROXIMATION

被引:61
作者
SCHOEN, JM
DENKER, SP
机构
[1] Department of Electrical Engineering, Columbia University, New York
[2] Bell Telephone Laboratories, Allentown
[3] Schlumberger-Doll Research Center, Ridgefield
来源
PHYSICAL REVIEW | 1969年 / 184卷 / 03期
关键词
D O I
10.1103/PhysRev.184.864
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The augmented-plane-wave virtual-crystal approximation is used to compute band structures and densities of states of the titanium monoxide system as a function of vacancy concentration and composition. TiO is a nonstoichiometric, cubic refractory compound with a 15% intrinsic vacancy concentration on both sublattices. The effective-mass approximation and an experimental value for the electron relaxation time are used to estimate several transport properties. The theoretical values are compared with experiment and used to examine the validity of our one-electron, muffin-tin-potential model of a nonstoichiometric compound. As it stands, this model does not treat the potential between the muffin-tin spheres accurately. It gives a physically valid description for most transport properties, but not for cohesion. Nonetheless, if the conduction-band edge does not vary appreciably with composition or total vacancy concentration, the average electronic energy is a minimum at the observed vacancy concentration. © 1969 The American Physical Society.
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页码:864 / &
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