BAND-GAP CLOSURE IN INSULATOR NEAR METAL-INSULATOR INTERFACE

被引：19

作者：

OKIJI, A

KASAI, H

机构：

[1] Department of Applied Physics, Osaka University, Suita, Osaka, 565, Yamadakami

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90430-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electronic densities of states near the metal-insulator interface are investigated laying stress on many-body effects, using the Hubbard model with an interface layer of randomly occupied atoms. It can be shown that with close contact with the metal the small energy gap caused by many-body effects in the insulator may close near the surface. © 1979.

引用

页码：529 / 534

页数：6

共 8 条

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[3] ELECTRON CORRELATIONS IN NARROW ENERGY BANDS .3. IMPROVED SOLUTION
HUBBARD, J
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[4] ELECTRON CORRELATIONS IN NARROW ENERGY BANDS
HUBBARD, J
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 276 (1364) : 238 - +
[5] ELECTRONIC STATES NEAR METAL-INSULATOR INTERFACE
OKIJI, A
KASAI, H
TERAKAWA, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 44 (04) : 1275 - 1281
[6] SINGLE-SITE APPROXIMATIONS IN ELECTRONIC THEORY OF SIMPLE BINARY ALLOYS
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KIRKPATRICK, S
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[J]. PHYSICAL REVIEW, 1968, 175 (03): : 747 - +
[7] Zubarev D. N., 1960, SOV PHYS USPEKHI, V3, P320, DOI DOI 10.1070/PU1960V003N03ABEH003275
[8] [No title captured]

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