MECHANISM GENERATING SWITCHING EFFECTS IN CU-TCNQ AND AG-TCNQ FILMS

被引：40

作者：

GU, ZZ ^{[1
]}

WU, HM ^{[1
]}

WEI, Y ^{[1
]}

LIU, JZ ^{[1
]}

机构：

[1] SOUTHEAST UNIV,DEPT CHEM,NANJING 210018,PEOPLES R CHINA

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1993年 / 97卷 / 11期

关键词：

D O I：

10.1021/j100113a013

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Computational analyses on bands of Cu-TCNQ and Ag-TCNQ by using tight binding EHMO are presented in this paper. The analyses point out that the change of frontier bands of metal-TCNQ triggers off switching effect of these two complexes. The proposed mechanism on switching effects well explains the experimental results of conductivities and charge transfer of Cu-TCNQ and Ag-TCNQ in high- and low-impedance states.

引用

页码：2543 / 2545

页数：3

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