ELECTRON-TRANSPORT IN GAAS/ALXGA1-XAS HETEROJUNCTIONS AT LOW-TEMPERATURES

被引：4

作者：

ARTAKI, M ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期

关键词：

D O I：

10.1016/0038-1101(88)90302-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：383 / 386

页数：4

共 15 条

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