THE EFFECTS OF TITANIUM IMPURITIES IN N+-P SILICON SOLAR-CELLS

被引:10
作者
SALAMA, AM
CHENG, LJ
机构
关键词
D O I
10.1149/1.2129839
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1164 / 1167
页数:4
相关论文
共 8 条
[1]  
CHEN JT, UNPUBLISHED
[2]  
HOPKINS RH, 1976, JPLDOE954331 CONTR
[3]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[4]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[5]  
Salama A. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P496
[6]  
SCOTTMONCK J, 1977, 2ND SPECTR Q REP
[7]  
TSAY FT, UNPUBLISHED
[8]  
1961, METALS HDB, V1, P1147