ELECTROLUMINESCENCE FROM STRAINED SIGE/SI QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

被引：29

作者：

FUKATSU, S ^{[1
]}

USAMI, N ^{[1
]}

CHINZEI, T ^{[1
]}

SHIRAKI, Y ^{[1
]}

NISHIDA, A ^{[1
]}

NAKAGAWA, K ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8A期

关键词：

ELECTROLUMINESCENCE; STRAINED SIGE/SI QUANTUM WELL; SOLID SOURCE SI MOLECULAR BEAM EPITAXY; HOLE DEPOPULATION;

D O I：

10.1143/JJAP.31.L1015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence (EL) is reported for Si0.8Ge0.2/Si quantum well (QW) structures grown by "solid source" Si molecular beam epitaxy for the first time. The spectral profile was dominated by SiGe quantum well emissions, no-phonon (NP) transitions due to symmetry-breaking SiGe alloy disordering and its transverse optical (TO) phonon replica. EL was observed from 27 up to 120 K. The integrated intensity was found to linearly increase with increasing injection current. Hole depopulation out of the quantized state was responsible for EL spectral variation at higher temperatures.

引用

页码：L1015 / L1017

页数：3

共 3 条

[1] ELECTROLUMINESCENCE FROM A PSEUDOMORPHIC SI0.8GE0.2 ALLOY
ROBBINS, DJ
CALCOTT, P
LEONG, WY
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1350 - 1352
[2] WELL-RESOLVED BAND-EDGE PHOTOLUMINESCENCE OF EXCITONS CONFINED IN STRAINED SI1-XGEX QUANTUM-WELLS
STURM, JC
MANOHARAN, H
LENCHYSHYN, LC
THEWALT, MLW
ROWELL, NL
NOEL, JP
HOUGHTON, DC
[J]. PHYSICAL REVIEW LETTERS, 1991, 66 (10) : 1362 - 1365
[3] QUANTUM CONFINEMENT EFFECTS IN STRAINED SILICON-GERMANIUM ALLOY QUANTUM-WELLS
XIAO, X
LIU, CW
STURM, JC
LENCHYSHYN, LC
THEWALT, MLW
GREGORY, RB
FEJES, P
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2135 - 2137

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