IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF PT-DIFFUSED DEVICES

被引：3

作者：

DENG, B

SHU, C

KUWANO, H

机构：

[1] Keio University, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 6A期

关键词：

PLATINUM; SILICON; MOBILE IONS; INTERFACE STATES; LEAKAGE CURRENTS; PN DIODE; POWER DEVICE;

D O I：

10.1143/JJAP.34.2969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improvement of the electrical characteristics of Pt-diffused p(+)n diodes is achieved by reducing Pt-induced adverse effects. Platinum diffusion induces diffusion of mobile Pt ions into SiO2 films and also changes the surface condition near the Si-SiO2 interface. The former makes the devices unstable and the latter causes increase of leakage current. It is found that mobile Pt ions can be fixed in phosphosilicate glass (PSG) by fabricating metal-phosphosilicate glass-oxide-silicon (MGOS) structures. The reduction of the leakage current is carried out by improving the surface condition near the Si-SiO2 interface. It is revealed that the Pt-diffused p(+)n diodes having a PSG film on SiO2 film and a (100) substrate instead of a (111) substrate, which is conventionally used in power devices, are useful for both the preservation of electrical stability and the reduction of leakage current.

引用

页码：2969 / 2973

页数：5

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