SCANNING ELECTRICAL RESISTOMETRY (SER) OF CR THIN-FILM OXIDATION

被引：4

作者：

CVELBAR, A ^{[1
]}

CUK, B ^{[1
]}

PANJAN, P ^{[1
]}

NAVINSEK, B ^{[1
]}

ZALAR, A ^{[1
]}

机构：

[1] INST ELECTR & VACUUM TECH,LJUBLJANA 61000,SLOVENIA

来源：

VACUUM | 1995年 / 46卷 / 8-10期

关键词：

D O I：

10.1016/0042-207X(95)00073-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A continuous in situ measurement of the electrical resistivity of a sample while time (and temperature) are changing, was used to measure the oxidation kinetics of 464 nm thin chromium films. The measured films were sputtered in a plasma beam sputtering apparatus onto alumina superstrate ceramic substrates with the preformed thick film contacts. First the SER was done during constant heating rate. Then it was used to sense the oxidation kinetics at 700 degrees C. SER results which are in good correlation with AES depth profiles show that the oxide thickness grows as the square root of time with a parabolic rate constant k(p) = 2.3 x 10(-13)cm(2) s(-1).

引用

页码：923 / 926

页数：4

共 4 条

[1] A SCANNING ELECTRICAL-RESISTIVITY (SER) STUDY OF PHASE-SEPARATION IN AN AL-22 AT PERCENT-ZN ALLOY [J].