LOW-TEMPERATURE GROWTH OF SIC THIN-FILMS ON SI AND 6H-SIC BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY

被引：209

作者：

FISSEL, A

SCHROTER, B

RICHTER, W

机构：

[1] Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, D-07743 Jena

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of stoichiometric SiC on Si(111) and 2°-5°off- oriented 6H-SiC(0001) substrates was carried out at low temperatures (800-1000°C) by means of solid-source molecular beam epitaxy controlled by a quadrupole mass spectrometry based flux meter. The films were obtained on Si-stabilized surfaces showing (3×3) and (2×2) superstructures in the case of SiC(0001). The reflection high-energy diffraction (RHEED) patterns and damped RHEED-oscillations during the growth on 6H-SiC(0001) at T>900°C indicate that two-dimensional nucleation on terraces is the dominant growth process.© 1995 American Institute of Physics.

引用

页码：3182 / 3184

页数：3