学术探索
学术期刊
新闻热点
数据分析
智能评审

ENHANCED DIFFUSION MECHANISMS

被引：167
作者：
BOURGOIN, JC
CORBETT, JW
机构：
[1] Groupe Phys. Solides, E.N.S., Univ. Paris 7, France
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 3-4期
关键词：
CRYSTALS - RADIATION DAMAGE - SEMICONDUCTOR MATERIALS;
D O I：
10.1080/00337577808240846
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The phenomenology is reviewed for several enhanced diffusion mechanisms: the normal ionization-enhanced diffusion mechanism, the Bourgoin mechanism, the energy-release mechanism and some recoil mechanisms. Application of these mechanisms are discussed for crystalline and amorphous semiconductors, super-ionic materials and insulators in radiation damage, impurity and self-diffusion, ion-implantation, and dislocation-motion-experiments.
引用
收藏
页码：157 / 188
页数：32
相关论文
共 320 条
12345678910