OPTICAL MICROPROBE RESPONSE OF GAAS DIODES

[1] GIBBON JF, 1964, IEEE T CIRCUIT THEOR, VCT11, P378

[2] LEE CA, 1966, IEEE T EL DEV, VED13, P175

[3] LOFERSKI JJ, 1961, RCA REV, V22, P38

[4] DIFFUSION LENGTHS IN EPITAXIAL GAAS BY ANGLE LAPPED JUNCTION METHOD [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 807 - +

[5] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[1] GIBBON JF, 1964, IEEE T CIRCUIT THEOR, VCT11, P378

[2] LEE CA, 1966, IEEE T EL DEV, VED13, P175

[3] LOFERSKI JJ, 1961, RCA REV, V22, P38

[4] DIFFUSION LENGTHS IN EPITAXIAL GAAS BY ANGLE LAPPED JUNCTION METHOD [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 807 - +

[5] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +