CONCENTRATION- AND COMPENSATION-DEPENDENT SPIN-LATTICE RELAXATION IN N-TYPE SILICON

被引：27

作者：

YANG, G

HONIG, A

机构：

来源：

PHYSICAL REVIEW | 1968年 / 168卷 / 02期

关键词：

D O I：

10.1103/PhysRev.168.271

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：271 / +

页数：1

共 54 条

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