SUPERCONDUCTIVITY AND DISORDER-DRIVEN METAL-INSULATOR-TRANSITION IN QUENCH-CONDENSED TIN FILMS

被引：6

作者：

MARKIEWICZ, RS

SHIFFMAN, CA

HO, W

机构：

[1] Northeastern Univ, Boston, MA, USA, Northeastern Univ, Boston, MA, USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1988年 / 71卷 / 3-4期

关键词：

DISORDER-DRIVEN TRANSITION - METAL-INSULATOR TRANSITION - QUENCH-CONDENSED THIN FILMS;

D O I：

10.1007/BF00118574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effects of disorder in a series of Sn films quench-condensed onto cryogenically cooled substrates. We find a simple scaling of the conductivity with film thickness sigma (d minus d//c)**v, with v congruent 0. 85, and a metal-insulator transition near D//c congruent 40-50 A. The superconducting transition temperatures depend linearly on 1/d, provided d is not too small, and the films exhibit strong annealing effects. These features are explained using a model in which grain boundary scattering dominates intragrain scattering.

引用

页码：175 / 191

页数：17

共 34 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].