LOW THRESHOLD 1.5-MU-M TENSILE-STRAINED SINGLE QUANTUM-WELL LASERS

被引：66

作者：

ZAH, CE

BHAT, R

PATHAK, B

CANEAU, C

FAVIRE, FJ

ANDREADAKIS, NC

HWANG, DM

KOZA, MA

CHEN, CY

LEE, TP

机构：

[1] Bellcore, NVC3X361, 331 Newman Springs Road Red Bank

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 16期

关键词：

SEMICONDUCTOR LASERS; LASERS AND LASER APPLICATIONS;

D O I：

10.1049/el:19910887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally found that the threshold current density of 1.5-mu-m tensile-strained single quantum well lasers decreases with increased tensile strain. A threshold current density as low as of 197 A/cm2 is obtained with an In0.3Ga0.7As well. With semi-insulating current blocking layers and high reflection facet coatings, a threshold current as low as 2 mA is obtained from 150-mu-m long lasers and a maximum CW operation temperature of 135-degrees-C is achieved from 1 mm long lasers.

引用

页码：1414 / 1416

页数：3

共 9 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].