UNEXPLORED PROPERTIES OF DEFECTS WITH TRIPLY DEGENERATE GAP STATES IN SEMICONDUCTORS - THE ROLE OF LATTICE DISTORTION

被引：17

作者：

LANNOO, M

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.36.9355

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9355 / 9357

页数：3

共 14 条

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