SILICON P-N-JUNCTION ALLOY DIODES

被引：59

作者：

PEARSON, GL

SAWYER, B

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1952年 / 40卷 / 11期

关键词：

D O I：

10.1109/JRPROC.1952.273960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1348 / 1351

页数：4

共 10 条

[1] P-N JUNCTIONS PREPARED BY IMPURITY DIFFUSION [J].

HALL, RN ;

DUNLAP, WC .

PHYSICAL REVIEW, 1950, 80 (03) :467-468

[2]

MCAFEE KB, 1952, PHYS REV, V87, P190

[3] OBSERVATIONS OF ZENER CURRENT IN GERMANIUM P-N JUNCTIONS [J].

MCAFEE, KB ;

RYDER, EJ ;

SHOCKLEY, W ;

SPARKS, M .

PHYSICAL REVIEW, 1951, 83 (03) :650-651

[4]

PEARSON GL, 1952, PHYS REV, V87, P190

[5] P-N JUNCTION RECTIFIER AND PHOTO-CELL [J].

PIETENPOL, WJ .

PHYSICAL REVIEW, 1951, 82 (01) :120-121

[6]

SCAFF JH, 1947, AT&T TECH J, V26, P1

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[8]

Shockley W., 1950, ELECTRONS HOLES SEMI, P240

[9]

TEAL GK, 1952, PHYS REV, V87, P190

[10]

1952, MAY APS M WASH