STUDY AND DEVELOPMENT OF A GENERIC ELECTROCHEMICAL ION-EXCHANGE PROCESS TO FORM MXS OPTOELECTRONIC MATERIALS FROM ZNS PRECURSOR FILMS FORMED BY CHEMICAL-PRECIPITATION SOLUTION DEPOSITION

被引:40
作者
ENGELKEN, RD
ALI, S
CHANG, LN
BRINKLEY, C
TURNER, K
HESTER, C
机构
[1] Department of Engineering, Arkansas State University, State University
基金
美国国家科学基金会;
关键词
D O I
10.1016/0167-577X(90)90030-P
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the formation of a wide variety of metal sulfide films such as SnS and CdS by an electrochemical ion-exchange process where the metal cation of the desired product film exchanges with the Zn(II) in a ZnS film deposited on non-conductive substrates by chemical-precipitation solution techniques. The process works for most metals that can be electroplated from aqueous baths (i.e. more electrochemically noble than Zn) and yields nearly-stoichiometric, polycrystalline, and often photoconductive M(x)S films. Key advantages of the process include the very low hazard/toxicity and cost of the chemicals used in the process and the avoidance of secondary sulfide (PbS, CdS, In2S3, Sb2S3, etc.) sludges, colloids, precipitates, etc., of toxic and/or expensive metals. In particular, its outstanding photosensitivity and low toxicity point toward the utility of SnS formed by our method for photodetector applications.
引用
收藏
页码:264 / 274
页数:11
相关论文
共 13 条
  • [1] ABEL E, 1973, COMPREHENSIVE INORGA, V2, P78
  • [2] LEAD SELENIDE DETECTORS FOR INTERMEDIATE TEMPERATURE OPERATION
    BODE, DE
    JOHNSON, TH
    MCLEAN, BN
    [J]. APPLIED OPTICS, 1965, 4 (03): : 327 - &
  • [3] CHEMICAL BATH DEPOSITION OF THIN-FILM CADMIUM SELENIDE FOR PHOTO-ELECTROCHEMICAL CELLS
    BOUDREAU, RA
    RAUH, RD
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 513 - 516
  • [4] Bylander E. G., 1971, MAT SEMICONDUCTOR FU, P14
  • [5] CHOPRA KL, 1982, PHYS THIN FILMS, V12, P201
  • [6] LOW-TEMPERATURE CHEMICAL PRECIPITATION AND VAPOR-DEPOSITION OF SNXS THIN-FILMS
    ENGELKEN, RD
    MCCLOUD, HE
    LEE, C
    SLAYTON, M
    GHOREISHI, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (11) : 2696 - 2707
  • [7] HALL N, 1976, METAL FINISHING GUID, V44, P457
  • [8] HILL R, 1978, ACTIVE PASSIVE THIN, P536
  • [9] HOVEL HJ, 1975, SEMICONDUCT SEMIMET, V11, P195
  • [10] KITAEV GA, 1970, ZH NEORG KHIM+, V15, P167