THERMOELECTRIC AC POWER SENSOR BY CMOS TECHNOLOGY

被引:51
作者
JAEGGI, D
BALTES, H
MOSER, D
机构
[1] Physical Electronics Laboratory, Institute of Quantum Electronics, ETH Zurich, 8093, Zurich
关键词
D O I
10.1109/55.192757
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the first thermoelectric ac power sensor (thermoconverter) realized by industrial CMOS IC technology in combination with postprocessing micromachining. The sensor is based on a polysilicon heating resistor and a polysilicon/aluminum thermopile integrated on an oxide microbridge. The thermopile sensitivity is 9.9 mV / mW and the burn-out power of the sensor is 50 mW. The time constant is 1.85 ms and the signal-to-noise ratio is 8 . 10(9) / W. The linearity error with respect to frequency is less then 0.1% below 400 MHz and less than 1% up to 1.2 GHz.
引用
收藏
页码:366 / 368
页数:3
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