BOSON PEAK IN RAMAN-SPECTRA OF HYDROGENATED AMORPHOUS-SILICON

被引：10

作者：

IVANDA, M ^{[1
]}

FURIC, K ^{[1
]}

GAMULIN, O ^{[1
]}

GRACIN, D ^{[1
]}

机构：

[1] SCH MED, DEPT PHYS & BIOPHYS, Zagreb, Croatia, YUGOSLAVIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80067-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous silicon films were prepared by a dc magnetron sputtering method. Broad background signal observed in Raman spectra near the excitation line which is recently attributed to the recombination of nonthermal electron with nonthermal holes was decomposed from the phonon bands. The Stokes/ anti-Stokes ratio, depolarization ratio and the shape of the background signal have the characteristics typical for the "boson" peak in glasses. The appearance of the "boson" peak in a-Si:H is discussed in a model of the non-continuous structure of amorphous silicon, composed of the blobs of strongly connected silicon atoms placed around hydrogen clusters.

引用

页码：103 / 106

页数：4

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