SUBSTRATE SURFACE PREPARATION AND ITS EFFECT ON EPITAXIAL SILICON

被引：12

作者：

RAICHOUDHURY, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 07期

关键词：

D O I：

10.1149/1.2408277

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1183 / +

页数：1

共 15 条

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AMELINCKX, S .

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[2]

ANGELLO SJ, 1969 WESCON SAN FRAN

[3] ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

APPLIED PHYSICS LETTERS, 1963, 3 (09) :158-160

[4]

CHALMERS B, 1964, PRINCIPLES SOLIDIFIC, P55

[5]

Herzog A.H., 1965, Process for Polishing Semiconductor Materials, Patent No. [3170273A, 3170273]

[6] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J].

KOCK, AJRD .

APPLIED PHYSICS LETTERS, 1970, 16 (03) :100-&

[7]

LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484

[8] STACKING FAULTS IN ANNEALED SILICON SURFACES [J].

LAWRENCE, JE .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :360-&

[9]

MENDEL E, 1967, SEMICOND PROD SOLID, V10, P27

[10] THERMALLY INDUCED DISLOCATIONS IN SILICON [J].

RAICHOUDHURY, P ;

TAKEI, WJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4980-+

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