QUANTIZED CONDUCTANCE OF BALLISTIC CONSTRICTIONS IN INAS/ALSB QUANTUM-WELLS

被引：22

作者：

KOESTER, SJ ^{[1
]}

BOLOGNESI, CR ^{[1
]}

ROOKS, MJ ^{[1
]}

HU, EL ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.108683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Split-gate ballistic constrictions have been fabricated on InAs/AlSb quantum-well heterostructures. Sharp conductance steps of 2e2/h are observed at 4.2 K, while conductance plateaus persist up to 30 K. The sharp features and high temperature operation are made possible by the low effective mass (m(GAMMA)* = 0.023m(e)) of InAs, and the closeness of the quantum well (20 nm) to the wafer surface.

引用

页码：1373 / 1375

页数：3

共 14 条

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