TUNGSTEN DEPOSITION ON POROUS SILICON FOR FORMATION OF BURIED CONDUCTORS IN SINGLE-CRYSTAL SILICON

被引：11

作者：

TSAO, SS

BLEWER, RS

TSAO, JY

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 07期

关键词：

D O I：

10.1063/1.97601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：403 / 405

页数：3

共 17 条

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[8]

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[9]

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[10]

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