EFFECT OF DISLOCATIONS ON ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE

被引:1
作者
BAITINGER, U
SCHNEPF, D
ARNDT, J
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来源
JOURNAL DE PHYSIQUE | 1969年 / 30卷 / 01期
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D O I
10.1051/jphys:0196900300108700
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页码:87 / +
页数:1
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[1]  
BAITINGER U, TO BE PUBLISHED
[2]   Etch-Pit Studies of Dislocations in Indium Antimonide [J].
Bell, R. L. ;
Willoughby, A. F. W. .
JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) :219-228
[3]   LANDAU LEVELS AND MAGNETO-ABSORPTION IN INSB [J].
BELL, RL ;
ROGERS, KT .
PHYSICAL REVIEW, 1966, 152 (02) :746-&
[4]   STATISTICS OF THE OCCUPATION OF DISLOCATION ACCEPTORS (ONE-DIMENSIONAL INTERACTION STATISTICS) [J].
BROUDY, RM ;
MCCLURE, JW .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) :1511-1516
[5]   THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS [J].
BROUDY, RM .
ADVANCES IN PHYSICS, 1963, 12 (46) :135-184
[6]  
Burgers JM, 1939, P K NED AKAD WETENSC, V42, P378
[7]   ELEKTRONENZUSTANDE IN HALBLEITERVERSETZUNGEN [J].
GUTH, W ;
HAIST, W .
PHYSICA STATUS SOLIDI, 1966, 17 (02) :691-&
[8]   ON THE PLASTICITY OF GERMANIUM AND INDIUM ANTIMONIDE [J].
HAASEN, P .
ACTA METALLURGICA, 1957, 5 (10) :598-599
[9]   SOME GEOMETRICAL RELATIONS IN DISLOCATED CRYSTALS [J].
NYE, JF .
ACTA METALLURGICA, 1953, 1 (02) :153-162
[10]   ANISOTROPIC PLASTIC DEFORMATION OF INDIUM ANTIMONIDE [J].
PEISSKER, E ;
ALEXANDER, H ;
HAASEN, P .
PHILOSOPHICAL MAGAZINE, 1962, 7 (80) :1279-&