BEAM PROPERTIES OF ALGAAS POWER LASERS WITH HIGH-QUALITY ETCHED MIRRORS

被引：13

作者：

BONA, GL

BUCHMANN, P

CLAUBERG, R

JAECKEL, H

VETTIGER, P

VOEGELI, O

WEBB, DJ

机构：

[1] Zurich Research Laboratory, IBM Research Division, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1109/68.93862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality etched mirrors for AlGaAs/GaAs power lasers for applications in optical storage have been fabricated by chemically assisted ion-beam etching. In order to ensure flat mirror facets of the ridge-waveguide lasers, a flared-waveguide end section is employed. This results in a very slight mirror roughness of approximately 20 nm across the beam cross section, and yields excellent beam properties allowing diffraction-limited focusing up to 50 mW output power.

引用

页码：412 / 414

页数：3

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