ON THE EFFECT OF PROCESSING PARAMETERS IN THE CHEMICAL-VAPOR-DEPOSITION OF YBA2CU3O7-DELTA THIN-FILMS ON POLYCRYSTALLINE SILVER

被引:16
作者
CHEN, L
PIAZZA, TW
SCHMIDT, BE
KELSEY, JE
KALOYEROS, AE
HAZELTON, DW
WALKER, MS
LUO, L
DYE, RC
MAGGIORE, CJ
WILKINS, DJ
KNORR, DB
机构
[1] SUNY Albany, DEPT PHYS, ALBANY, NY 12222 USA
[2] INTERMAGNET GEN CORP, GUILDERLAND, NY 12084 USA
[3] LOS ALAMOS NATL LAB, CTR MAT SCI, LOS ALAMOS, NM 87545 USA
[4] RENSSELAER POLYTECH INST, DEPT MAT ENGN, TROY, NY 12180 USA
[5] SUNY Albany, DEPT PHYS, ALBANY, NY 12222 USA
关键词
D O I
10.1063/1.354007
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results are reported from an investigation of the effects of selected processing parameters on the morphology and properties of YBa2Cu3O7-delta (YBCO) superconducting thin films grown directly on polycrystalline silver substrates by chemical-vapor deposition (CVD). These results were achieved through a set of experimental studies which examined: (i) recrystallization mechanisms of polycrystalline silver and their effect on the deposition of YBCO thin films; and (ii) CVD processing conditions leading to the growth of high-quality YBCO films. The samples were analyzed using dynamic impedance, four-point resistivity probe, x-ray diffraction, Rutherford backscattering, and scanning electron microscopy. These studies showed that substrate temperature played a critical role not only in the formation of YBCO films, but also in the recrystallization of silver substrates, which in turn greatly influenced film growth. The studies also led to the identification of a two-stage processing scheme for the growth of YBCO films on silver. The first processing stage consisted of a substrate conditioning cycle which involved a 10 min ramping from room temperature to deposition temperature where the substrates were held for an additional 10 min in a flow of 70 sccm 02 at a reactor working pressure of 2 Torr. The second processing stage involved actual film deposition at 760-800-degrees-C for 3-10 min (depending on desired film thickness) in a mixed flow of 70 sccm O2 and 210 sccm N2O at a reactor working pressure of 4 Torr. Samples thus produced were highly oriented along the c axis perpendicular to the substrate with a zero resistance transition temperature of 87 K and a critical current density of 2 X 10(4) A/cm2, (77 K, B=0). The films had a thickness of 200-700 nm depending on the length of the growth cycle, which corresponded to the growth rates in the range 65-130 nm/min. A growth mechanism for YBCO on polycrystalline silver, which emphasized the role of silver recrystallization, was consequently proposed and discussed.
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收藏
页码:7563 / 7570
页数:8
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