THERMALLY STIMULATED CURRENTS IN SEMICONDUCTORS AND INSULATORS HAVING ARBITRARY TRAP DISTRIBUTIONS

被引：149

作者：

SIMMONS, JG ^{[1
]}

TAM, MC ^{[1
]}

TAYLOR, GW ^{[1
]}

机构：

[1] UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.7.3714

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3714 / 3719

页数：6

共 12 条

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[9] THEORY OF ISOTHERMAL CURRENTS AND DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATORS CONTAINING ARBITRARY TRAP DISTRIBUTIONS [J].

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PHYSICAL REVIEW B, 1973, 7 (08) :3706-3713

[10] HIGH-FIELD ISOTHERMAL CURRENTS AND THERMALLY STIMULATED CURRENTS IN INSULATORS HAVING DISCRETE TRAPPING LEVELS [J].

SIMMONS, JG ;

TAYLOR, GW .

PHYSICAL REVIEW B, 1972, 5 (04) :1619-&

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