FABRICATION OF QUANTUM WIRES AND DOTS BY X-RAY-LITHOGRAPHY AND GA+ IMPLANTATION ENHANCED INTERMIXING

被引：8

作者：

KUPKA, RK

CHEN, Y

PLANEL, R

LAUNOIS, H

机构：

[1] Laboratoire de Microstructures et de Microe ́lectronique (CNRS), L2M 196, ave Henri Ravera, BP 107

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00114-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mass fabrication of GaAs/AlxGa1-xAs quantum-well wires and dots is described, using a high resolution synchrotron x-ray lithography system to define Au/W implantation masks and employing a Ga+ implantation enhanced intermixing technique on a GaAs/AlAs/ AlGaAs double barrier quantum well. The large area line and dot arrays with size ranging from 40 - 200 nm show a very large photoluminescence blud-shift and the influence of the mask geometry is discussed. The defined fabrication of even smaller structures by x-ray lithography is possible, but secondary effects which stem from the substrate radiation inhibit a further size decrease and the potential importance of x-ray or VUV photo-fluorescence in the resist insolation process is pointed out.

引用

页码：311 / 316

页数：6

共 22 条

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