FABRICATION OF QUANTUM WIRES AND DOTS BY X-RAY-LITHOGRAPHY AND GA+ IMPLANTATION ENHANCED INTERMIXING

被引:8
作者
KUPKA, RK
CHEN, Y
PLANEL, R
LAUNOIS, H
机构
[1] Laboratoire de Microstructures et de Microe ́lectronique (CNRS), L2M 196, ave Henri Ravera, BP 107
关键词
D O I
10.1016/0167-9317(94)00114-A
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The mass fabrication of GaAs/AlxGa1-xAs quantum-well wires and dots is described, using a high resolution synchrotron x-ray lithography system to define Au/W implantation masks and employing a Ga+ implantation enhanced intermixing technique on a GaAs/AlAs/ AlGaAs double barrier quantum well. The large area line and dot arrays with size ranging from 40 - 200 nm show a very large photoluminescence blud-shift and the influence of the mask geometry is discussed. The defined fabrication of even smaller structures by x-ray lithography is possible, but secondary effects which stem from the substrate radiation inhibit a further size decrease and the potential importance of x-ray or VUV photo-fluorescence in the resist insolation process is pointed out.
引用
收藏
页码:311 / 316
页数:6
相关论文
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