STRUCTURAL AND ELECTRICAL CONTACT PROPERTIES OF LPE GROWN GAAS DOPED WITH INDIUM

被引:15
作者
CHEN, JF
WIE, CR
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D O I
10.1007/BF02652100
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:501 / 507
页数:7
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